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| 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications * * * High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 55 ns (typ.) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25C Tc = 25C DC Pulse Symbol VCBO VCEX VCEO VEBO IC ICP IB Pc Tj Tstg Rating 100 80 50 7 5 10 0.5 1 20 150 -55 to 150 Unit V V V A A W C C JEDEC JEITA TOSHIBA SC-64 2-7J1A Weight: 0.36 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter brakedown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Rise time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.6 A IC = 1.6 A, IB = 32 mA IC = 1.6 A, IB = 32 mA See Figure 1 circuit diagram VCC ~ 24 V, RL = 15 W IB1 = 32 mA, IB2 = -53 mA Min 3/4 3/4 50 400 200 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 3/4 63 560 55 Max 100 100 3/4 1000 3/4 0.22 1.10 3/4 3/4 3/4 ns V V Unit nA nA V 1 2002-08-21 2SC5886 VCC 20 ms IB1 Input IB2 IB2 Duty cycle < 1% IB1 RL Output Figure 1 Marking Switching Time Test Circuit & Timing Chart C5886 Product No. Lot No. Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-08-21 2SC5886 IC - VCE 6 70 mA 50 mA 30 mA Common emitter 20 mA Tc = 25C 30000 10000 5000 3000 1000 500 300 100 50 30 10 0.001 0.003 Common emitter VCE = 2 V hFE - IC (A) IC 4 10 mA hFE Collector current 5 mA 2 2 mA IB = 1 mA 0 0 0 2 4 6 8 DC current gain Tc = 100C 25C -55C 0.01 0.03 0.1 0.3 1 3 10 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) - IC 3 Common emitter IC/IB = 50 30 10 Common emitter IC/IB = 50 VBE (sat) - IC Collector emitter saturation voltage VCE (sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 Base-emitter saturation voltage VBE (sat) (V) 5 3 1 0.5 0.3 25C 0.1 0.05 0.03 0.01 0.001 0.003 100C Tc = -55C 25C Tc = 100C -55C 0.001 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) IC - VBE 2 Common emitter VCE = 2 V 10 Common emitter 5 Tc = 25C 3 VCE - IB Collector-emitter saturation voltage VCE (V) IC (A) 1 0.5 0.3 2A IC = 2.5 A Collector current 1 Tc = 100C -55C 0.1 0.05 0.03 1A 25C 0 0 0.5 1 1.5 0.01 0.001 0.003 0.01 0.03 0.1 0.3 1 3 Base-emitter voltage VBE (V) Base current IB (A) 3 2002-08-21 2SC5886 rth (j-c) - tw Transient thermal resistance (junction- case) rth (j-c) (C/W) 50 30 10 5 3 Tc = 25C Infinite heat sink 1 0.5 0.001 Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.003 0.01 0.03 0.1 0.3 1 3 10 Pulse width tw (s) Safe Operation Area 100 50 30 IC max (pulsed) * 100 ms* 10 ms* 10 (A) 5 3 IC max (continuous) 1 ms* Collector current IC 1 0.5 0.3 DC OPERATION (Tc = 25C) 10 ms* 0.1 0.05 0.03 *: Single pulse Tc = 25C Curves must be derated linealy with increase in temperature 1 10 100 ms* VCEO max 100 0.01 0.1 Collector-emitter voltage VCEO (V) 4 2002-08-21 2SC5886 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-08-21 This datasheet has been download from: www..com Datasheets for electronics components. |
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